3BHB021400R0002是ABB的一款集成门极换流晶闸管（IGCT）和集成门极驱动电路的合称，它具有GTO高阻断能力和低通态压降，以及和IGBT相同的开关性能，被广泛应用于大功率中压变流器。

这种晶闸管的特点在于其具有GTO高阻断能力和低通态压降。它也具备和IGBT相同的开关性能，这使得它成为一种理想的兆瓦级、中压开关器件。

在关断状态下，IGCT门--阴极间的pn结提前进入反向偏置，并有效地退出工作，整个器件呈晶体管方式工作。此时，如果通过打开一个与阴极串联的开关(通常是MOSFET)，使P基极n发射极反偏，IGCT就会迅速阻止阴极注入，将整体的阳极电流强制转化成门极电流(通常在lµs内)，这样便把GTO转化成为一个无接触基区的PNP晶体管，消除了阴极发射极子收缩效应。这样，它的大关断电流比传统GTO的额定电流高出许多。

3BHB021400R0002 is a combination of ABB integrated gate commutated thyristor (IGCT) and integrated gate drive circuit. It has GTO high blocking capability and low on-state voltage drop, as well as the same switching performance as IGBT, and is widely used in high-power medium-voltage converters.

This thyristor is characterized by its high GTO blocking capability and low on-state voltage drop. It also has the same switching performance as the IGBT, making it an ideal megawatt-class, medium-voltage switching device.

In the off state, the pn junction between IGCT gate and cathode enters the reverse bias in advance and exits effectively, and the whole device works in transistor mode. At this point, if the p-base n emitter is reversed by turning on a switch in series with the cathode (usually a MOSFET), the IGCT will quickly prevent the cathode injection, forcing the overall anode current into a gate current (usually in lµs), thus transforming the GTO into a contact-free base PNP transistor. The contraction effect of cathode emitter is eliminated. As a result, its cut-off current is much higher than the rated current of a conventional GTO.

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