ABB 5SHY4045L0004 3BHB021400R0002 3BHE039203R0101 GVC736CE101 可控硅 半导体
大家使用的是单向晶闸管,也就是人们常说的普通晶闸管,它是由四层半导体材料组成的,有三个PN结,对外有三个电极〔图2(a) 〕∶第一层P型半导体引出的电极叫阳极A,第三层P型半导体引出的电极叫控制极G,第四层N型半导体引出的电极叫阴极K。从晶闸管的电路符号〔图2(b) 〕可以看到,它和二极管一样是一种单方向导电的器件,关键是多了一个控制极G,这就使它具有与二极管完全不同的工作特性。
以硅单晶为基本材料的P1N1P2N2四层三端器件,起始于1957年,因为它的特性类似于真空闸流管,所以国际上通称为硅晶体闸流管,简称晶闸管T,又因为晶闸管最初的在静止整流方面,所以又被称之为硅可控整流元件,简称为可控硅SCR.
在性能上,可控硅不仅具有单向导电性,而且还具有比硅整流元件(俗称”死硅”)更为可贵的可控性。它只有导通和关断两种状态。
可控硅能以毫安级电流控制大功率的机电设备,如果超过此功率,因元件开关损耗显著增加,允许通过的平均电流相降低,此时,标称电流应降级使用。
可控硅的优点很多,例如:以小功率控制大功率,功率放大倍数高达几十万倍;反应极快,在微秒级内开通、关断;无触点运行,无火花、无噪音;效率高,成本低等等。
可控硅的弱点:静态及动态的过载能力较差;容易受干扰而误导通。可控硅从外形上分类主要有:螺栓形、平板形和平底形。
可控硅元件的结构
不管可控硅的外形如何,它们的管芯都是由P型硅和N型硅组成的四层P1N1P2N2结构。见图1。它有三个PN结(J1、12、J3),从J1结构的P1层引出阳极A,从N2层引出阴级K,从P2层引出控制极G,所以它是一种四层三端的半导体器件。
We use a unidirectional thyristor, which is often referred to as an ordinary thyristor, which is composed of four layers of semiconductor material, with three PN junction, and three external electrodes (Figure 2(a)) : the electrode led by the first layer of P-type semiconductor is called anode A, the electrode led by the third layer of P-type semiconductor is called the control pole G, and the electrode led by the fourth layer of N-type semiconductor is called the cathode K. From the circuit symbol of the thyristor (Figure 2(b)), it can be seen that it is a single-direction conductive device like the diode, and the key is that there is a control pole G, which makes it have completely different working characteristics from the diode.
P1N1P2N2 four-layer three-terminal device with silicon single crystal as the basic material began in 1957, because its characteristics are similar to vacuum thyristor, so it is known internationally as silicon thyristor, referred to as thyristor T, and because the thyristor was originally in static rectification, it is also known as silicon controllable rectifier element, referred to as thyristor SCR.
In terms of performance, thyristor not only has unidirectional conductivity, but also has more valuable controllability than silicon rectifier elements (commonly known as "dead silicon"). It only has two states: on and off.
SCR can control high-power electromechanical equipment with milliampere-level current, if the power exceeds this, due to the significant increase in component switching loss, the average current phase allowed to pass is reduced, at this time, the nominal current should be degraded.
Thyristor has many advantages, such as: to control high power with small power, power amplification up to hundreds of thousands of times; The response is extremely fast, opening and closing in microseconds; No contact operation, no spark, no noise; High efficiency, low cost and so on.
The weakness of thyristor: static and dynamic overload capacity is poor; Easily misled by interference. Thyristor from the appearance of the main classification: bolt shape, flat plate shape and bottom shape.
Structure of thyristor element
Regardless of the shape of the thyristor, their core is a four-layer P1N1P2N2 structure composed of P-type silicon and N-type silicon. See Figure 1. It has three PN junctions (J1, 12, J3), from the P1 layer of the J1 structure leads to the anode A, from the N2 layer leads to the negative level K, from the P2 layer leads to the control pole G, so it is a four-layer three-terminal semiconductor device.
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