The GE VMIVME-5565-01000 Reflective Memory Node Card is a high-speed, low latency reflective memory node card. It provides a deterministic interface that allows up to 256 independent systems (nodes) to share data at a rate of up to 170 megabytes per second. Each reflective memory board can be configured with 64 megabytes or 128 megabytes of onboard SDRAM, and local SDRAM provides fast read and access time for stored data. The write operation is stored in the local SDRAM and broadcasted to other reflective memory nodes through a high-speed fiber optic data path.

The data transmission between nodes is software transparent, so there is no need for I/O overhead. During peak data rates, sending and receiving FIFOs buffer data to optimize processor and bus performance and maintain high data throughput. This design makes the VMIVME-5565-01000 node card particularly suitable for application scenarios that require high-speed data transmission and sharing.

Please note that product details and features may vary depending on specific versions or configurations. Before purchasing and using the GE VMIVME-5565-01000 Reflective Memory Node Card, it is recommended to read the product manual carefully or contact the supplier for the most accurate information. In addition, correct installation, configuration, and maintenance are key to ensuring the normal operation and extending the service life of any industrial equipment. Therefore, please ensure to operate according to the product instructions and relevant regulations.